Datasheet > 触发装置 > TRIAC> CQ223-4NTIN/LEAD

CQ223-4NTIN/LEAD

更新时间： 2024-11-24 13:07:03

品牌	Logo	应用领域
CENTRAL		三端双向交流开关
页数	文件大小	规格书
2页	366K
描述
4 Quadrant Logic Level TRIAC,

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中文翻译

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技术参数
数据手册

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CQ223-4NTIN/LEAD 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.73
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC	Base Number Matches：	1

CQ223-4NTIN/LEAD 数据手册

CQ223-4M

CQ223-4N

www.centralsemi.com

SURFACE MOUNT

4 AMP SILICON TRIAC

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQ223-4M series

type is an Epoxy Molded Silicon Triac designed for full

wave AC control applications featuring gate triggering in

all four (4) quadrants.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CQ223-4M CQ223-4N UNITS

Peak Repetitive Off-State Voltage

600

800

DRM

RMS On-State Current (T =80°C)

4.0

T(RMS)

Peak Non-Repetitive Surge Current, t=8.3ms

Peak Non-Repetitive Surge Current, t=10ms

I²t Value for Fusing, t=10ms

TSM

A²s

TSM

I²t

6.0

3.0

0.2

1.2

Peak Gate Power, tp=10μs

Average Gate Power Dissipation

Peak Gate Current, tp=10μs

Operating Junction Temperature

Storage Temperature

G(AV)

-40 to +125

-40 to +150

62.5

°C

°C/W

stg

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

Rated V

R =1KΩ

DRM GK

200

5.0

DRM

Rated V

, R =1KΩ, T =125°C

μA

DRM GK

V =12V, QUAD I, II, III

2.5

5.4

V =12V, QUAD IV

9.0

=1KΩ

1.6

5.0

V =12V, QUAD I, II, III, IV

0.95

1.25

1.75

=6.0A, tp=380μs

dv/dt

V = / V

T =125°C

V/μs

DRM

R2 (12-February 2010)

中文翻译

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