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CQ223-2MLEADFREE PDF预览

CQ223-2MLEADFREE

更新时间: 2024-11-24 13:07:03
品牌 Logo 应用领域
CENTRAL 三端双向交流开关
页数 文件大小 规格书
2页 75K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 2A I(T)RMS, PLASTIC PACKAGE-4

CQ223-2MLEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.14
Is Samacsys:N外壳连接:MAIN TERMINAL 2
配置:SINGLEJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:2 A
断态重复峰值电压:600 V表面贴装:YES
端子面层:MATTE TIN (315)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

CQ223-2MLEADFREE 数据手册

 浏览型号CQ223-2MLEADFREE的Datasheet PDF文件第2页 
TM  
Central  
CQ223-2M  
CQ223-2N  
Semiconductor Corp.  
2.0 AMP TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQ223-2M  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ223  
-2M  
600  
CQ223  
-2N  
800  
UNITS  
V
A
A
A2s  
W
W
A
°C  
Peak Repetitive Off-State Voltage  
V
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =80°C)  
I
I
I2t  
2.0  
20  
2.0  
3.0  
0.2  
1.2  
C
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Storage Temperature  
P
P
GM  
G(AV)  
GM  
I
T
T
-40 to +150  
-40 to +125  
62.5  
stg  
J
Junction Temperature  
Thermal Resistance  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
5.0  
200  
5.00  
8.00  
5.0  
1.8  
1.75  
2.0  
UNITS  
µA  
µA  
mA  
mA  
mA  
V
V
V
V/µs  
I
I
I
I
I
Rated V  
Rated V  
R
=1KΩ  
DRM  
DRM  
GT  
GT  
H
DRM, GK  
, R =1KΩ, T =125°C  
V =12V, QUAD I, II, III  
DRM GK  
C
1.35  
3.75  
1.2  
1.1  
1.50  
1.7  
D
V =12V, QUAD IV  
D
GK  
R
=1KΩ  
V
V
V
V =12V, QUAD I, II, III, IV  
GT  
TM  
TM  
D
TM  
TM  
I
I
=2.0A, tp=380µs  
=3.0A, tp=380µs  
2
dv/dt  
V = / V  
T =125°C  
DRM, C  
2.5  
3
D
R0 (11-May 2004)  

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