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CQ220-8DR PDF预览

CQ220-8DR

更新时间: 2024-11-04 13:07:07
品牌 Logo 应用领域
CENTRAL 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
2页 75K
描述
4 Quadrant Logic Level TRIAC, 400V V(DRM), 8A I(T)RMS, TO-220AB,

CQ220-8DR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ObsoleteReach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.29
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:10 mA最大直流栅极触发电压:1.5 V
最大维持电流:25 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:8 A
断态重复峰值电压:400 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

CQ220-8DR 数据手册

 浏览型号CQ220-8DR的Datasheet PDF文件第2页 
TM  
CQ220-8B  
CQ220-8D  
CQ220-8M  
CQ220-8N  
Central  
Semiconductor Corp.  
8.0 AMP TRIAC  
DESCRIPTION:  
200 THRU 800 VOLTS  
The CENTRAL SEMICONDUCTOR CQ220-8B  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
TO-220 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ220 CQ220 CQ220 CQ220  
-8B  
-8D  
-8M  
-8N  
UNITS  
Peak Repetitive Off-State Voltage  
V
I
I
200  
400  
600  
800  
V
A
A
A2s  
W
W
A
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =90°C)  
8.0  
50  
10  
C
Peak One Cycle Surge (t=8.3ms)  
I2t Value for Fusing (t=8.3ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Critical Rate of Rise of On-State Current  
Repetitive (f=60Hz)  
I2t  
P
P
I
40  
GM  
G (AV)  
GM  
1.0  
4.0  
16  
V
V
GM  
di/dt  
10  
A/µs  
°C  
°C  
°C/W  
°C/W  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
T
T
Θ
Θ
-40 to +150  
-40 to +125  
60  
stg  
J
JA  
JC  
3.2  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
500  
20  
50  
25  
1.50  
2.50  
1.75  
UNITS  
µA  
µA  
mA  
mA  
mA  
V
V
V
V/µs  
I
I
I
I
I
Rated V  
Rated V  
DRM  
DRM  
GT  
GT  
H
DRM  
DRM  
, T =125°C  
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
C
4.5  
17  
4.7  
0.95  
1.35  
1.30  
D
L
D
T
L
I =100mA  
V
V
V
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
GT  
GT  
TM  
D
L
D
TM  
L
I
=11A, tp=380µs  
2
dv/dt  
V = / V  
, R =∞, T =125°C  
5.0  
3
D
DRM GK  
C
R2 (24-September 2004)  

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