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CQ220-16NFP PDF预览

CQ220-16NFP

更新时间: 2024-12-01 03:26:35
品牌 Logo 应用领域
CENTRAL 三端双向交流开关
页数 文件大小 规格书
2页 80K
描述
16 AMP TRIAC 600 THRU 800 VOLTS

CQ220-16NFP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220FP针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.92

CQ220-16NFP 数据手册

 浏览型号CQ220-16NFP的Datasheet PDF文件第2页 
TM  
Central  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQ220-12MFP  
series type is an Epoxy Molded Silicon Triac designed  
for full wave AC control applications featuring gate  
triggering in all four (4) quadrants.  
CQ220-12MFP  
CQ220-12NFP  
Semiconductor Corp.  
12 AMP TRIAC  
600 THRU 800 VOLTS  
FULL PAK:  
• Fully insulated plastic case.  
• Suitable for automatic insertion.  
• No mica insulator required.  
• Does not require non-conductive nylon hardware.  
• Can be easily mounted with metal screw or rivet.  
TO-220FP CASE  
MARKING CODE: FULL PART NUMBER  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ220 CQ220  
-12MFP -12NFP  
UNITS  
Peak Repetitive Off-State Voltage  
V
I
I
600  
800  
V
A
A
A2s  
W
W
A
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =90°C)  
12  
80  
27  
40  
1.0  
4.0  
16  
C
Peak One Cycle Surge (t=8.3ms)  
I2t Value for Fusing (t=8.3ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Critical Rate of Rise of On-State Current  
Repetitive (f=60Hz)  
I2t  
P
P
I
GM  
G (AV)  
GM  
V
V
GM  
di/dt  
10  
A/µs  
°C  
°C  
°C/W  
°C/W  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
T
T
Θ
Θ
-40 to +150  
-40 to +125  
60  
stg  
J
JA  
JC  
2.7  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
500  
20  
50  
25  
1.50  
2.50  
1.50  
UNITS  
µA  
µA  
mA  
mA  
mA  
V
V
V
V/µs  
I
I
I
I
I
Rated V  
Rated V  
DRM  
DRM  
GT  
GT  
H
DRM  
DRM  
, T =125°C  
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
C
9.9  
D
L
24.3  
14.1  
1.10  
2.10  
1.33  
D
T
L
I =100mA  
V
V
V
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
GT  
GT  
TM  
D
L
D
TM  
L
I
=17A, tp=380µs  
2
dv/dt  
V = / V  
, R =∞, T =125°C  
10  
3
D
DRM GK  
C
R1 (14-September 2004)  

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