Datasheet > CQ220-12M3

CQ220-12M3

更新时间： 2024-12-02 14:48:39

品牌	Logo	应用领域
CENTRAL		三端双向交流开关
页数	文件大小	规格书
7页	650K
描述
12A,600V Through-Hole TRIAC

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中文翻译

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技术参数
数据手册

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CQ220-12M3 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC	Base Number Matches：	1

CQ220-12M3 数据手册

CQ220-12M3

www.centralsemi.com

SILICON

THREE-QUADRANT TRIAC

12 AMP, 600 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQ220-12M3 is

an epoxy molded silicon TRIAC designed for full wave

AC control applications featuring gate triggering in three

quadrants.

MARKING: FULL PART NUMBER

TO-220 CASE

FEATURES:

APPLICATIONS:

• 3Q technology for noise immunity

• High commutation capability

• Triggering in three quadrants only

• Motor controls

• General purpose AC switching

• High power inductive load switching

MAXIMUM RATINGS: (T =25°C unless otherwise noted) SYMBOL

UNITS

Peak Repetitive Off-State Voltage

Peak One Cycle Surge Voltage, t=10ms (T =125°C)

, V

600

700

DRM RRM

DSM

RMS On-State Current (T =90°C)

T(RMS)

Peak One Cycle Surge Current, t=16.7ms

I²t Value for Fusing, t=10ms

100

TSM

I²t

A²s

Average Gate Power Dissipation (T =125°C)

1.0

4.0

G(AV)

Peak Gate Current, tp=20μs (T =125°C)

Critical Rate of Rise of On-State Current

Repetitive, f=120Hz (T =125°C)

di/dt

-40 to +125

-40 to +150

A/μs

°C

Operating Junction Temperature

Storage Temperature

Thermal Resistance

°C

stg

°C/W

Thermal Resistance

1.4

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

, V =600V

MIN

TYP

MAX

5.0

UNITS

ꢀA

, I

DRM RRM

V =12V, R =30Ω, QUAD I, II, III

I =500mA

V =12V, R =30Ω, QUAD I, II, III

1.3

=17A, tp=380μs

1.39

1.55

500

dv/dt

V =⅔V

, R =∞, T =125°C

DRM GK

V/μs

R1 (7-October 2015)

12 3 4 5 6 7

中文翻译

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