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CQ202-4M PDF预览

CQ202-4M

更新时间: 2024-11-17 22:28:43
品牌 Logo 应用领域
CENTRAL 三端双向交流开关
页数 文件大小 规格书
2页 76K
描述
4.0 AMP TRIAC 600 THRU 800 VOLTS

CQ202-4M 数据手册

 浏览型号CQ202-4M的Datasheet PDF文件第2页 
TM  
CQ202-4M  
CQ202-4N  
Central  
Semiconductor Corp.  
4.0 AMP TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQ202-4M  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
TO-202 THYRISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ202  
-4M  
600  
CQ202  
-4N  
800  
UNITS  
V
A
A
A2s  
W
W
A
°C  
Peak Repetitive Off-State Voltage  
V
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =80°C)  
I
I
I2t  
4.0  
40  
2.4  
3.0  
0.2  
1.2  
C
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Storage Temperature  
P
P
GM  
G(AV)  
GM  
stg  
J
I
T
T
-40 to +150  
-40 to +125  
60  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
°C  
°C/W  
°C/W  
Θ
Θ
JA  
JC  
7.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
200  
20  
50  
25  
1.5  
2.5  
1.60  
UNITS  
µA  
µA  
mA  
mA  
mA  
V
V
V
V/µs  
I
I
I
I
I
Rated V  
Rated V  
R
=1KΩ  
DRM  
DRM  
GT  
GT  
H
DRM, GK  
, R =1KΩ, T =125°C  
V =12V, QUAD I, II, III  
DRM GK  
C
6.6  
35  
5.2  
1.1  
2.0  
1.25  
D
V =12V, QUAD IV  
D
R
=1KΩ  
GK  
V
V
V
V =12V, QUAD I, II, III  
GT  
GT  
TM  
D
V =12V, QUAD IV  
D
TM  
I
=6.0A, tp=380µs  
2
dv/dt  
V = / V  
T =125°C  
DRM, C  
5.0  
3
D
R4 (7-May 2004)  

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