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CQ202-4BS-2LEADFREE PDF预览

CQ202-4BS-2LEADFREE

更新时间: 2024-11-18 12:58:07
品牌 Logo 应用领域
CENTRAL 栅极触发装置三端双向交流开关
页数 文件大小 规格书
2页 36K
描述
TRIAC, 200V V(DRM), 4A I(T)RMS, TO-202-2, 3 PIN

CQ202-4BS-2LEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SFM
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.83
Is Samacsys:N外壳连接:MAIN TERMINAL 2
配置:SINGLEJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:200 V
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10触发设备类型:TRIAC
Base Number Matches:1

CQ202-4BS-2LEADFREE 数据手册

 浏览型号CQ202-4BS-2LEADFREE的Datasheet PDF文件第2页 
TM  
CQ202-4BS-2  
CQ202-4DS-2  
CQ202-4MS-2  
CQ202-4NS-2  
Central  
Semiconductor Corp.  
4.0 AMP TRIAC  
200 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQ202-4BS-2  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
TO-202-2 THYRISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ202  
-4BS-2  
CQ202  
-4DS-2  
CQ202 CQ202  
-4MS-2 -4NS-2 UNITS  
Peak Repetitive Off-State Voltage  
V
I
200  
400  
600  
800  
V
A
DRM  
RMS On-State Current (T =80°C)  
C
4.0  
40  
T(RMS)  
TSM  
Peak Non-Repetitive Surge Current (t=8.3ms)  
Peak Non-Repetitive Surge Current (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Storage Temperature  
I
I
A
35  
A
TSM  
I2t  
6.0  
3.0  
0.2  
1.2  
A2s  
W
P
GM  
P
I
W
G(AV)  
A
GM  
T
-40 to +150  
-40 to +125  
60  
°C  
°C  
°C/W  
°C/W  
stg  
Junction Temperature  
T
J
Thermal Resistance  
Θ
Θ
JA  
JC  
Thermal Resistance  
7.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
UNITS  
µA  
I
Rated V  
Rated V  
R
=1KΩ  
DRM  
DRM, GK  
I
, R =1KΩ, T =125°C  
DRM GK  
200  
5.0  
µA  
DRM  
C
I
V =12V, QUAD I, II, III  
D
V =12V, QUAD IV  
D
2.5  
5.4  
mA  
mA  
mA  
V
GT  
I
9.0  
GT  
I
R
=1KΩ  
1.6  
5.0  
H
GK  
V
V =12V, QUAD I, II, III, IV  
0.95  
1.25  
1.75  
1.75  
GT  
D
V
I
=6.0A, tp=380µs  
2
V
TM  
TM  
dv/dt  
V = / V  
T =125°C  
11  
V/µs  
3
D
DRM, C  
R1 (27-June 2005)  

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