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CQ202-4B-2LEADFREE PDF预览

CQ202-4B-2LEADFREE

更新时间: 2024-02-17 08:42:36
品牌 Logo 应用领域
CENTRAL 三端双向交流开关
页数 文件大小 规格书
2页 408K
描述
TRIAC, 200V V(DRM), 4A I(T)RMS, TO-202-2, 3 PIN

CQ202-4B-2LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SFM
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.83
外壳连接:MAIN TERMINAL 2配置:SINGLE
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:4 A
断态重复峰值电压:200 V表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
触发设备类型:TRIACBase Number Matches:1

CQ202-4B-2LEADFREE 数据手册

 浏览型号CQ202-4B-2LEADFREE的Datasheet PDF文件第2页 
CQ202-4B-2  
CQ202-4D-2  
CQ202-4M-2  
CQ202-4N-2  
www.centralsemi.com  
DESCRIPTION:  
4.0 AMP TRIAC  
200 THRU 800 VOLTS  
The CENTRAL SEMICONDUCTOR CQ202-4B-2  
series type is an epoxy molded silicon triac designed  
for full wave AC control applications featuring gate  
triggering in all four (4) quadrants.  
MARKING: FULL PART NUMBER  
TO-202-2 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
CQ202  
-4B-2  
200  
CQ202  
-4D-2  
400  
CQ202  
-4M-2  
600  
CQ202  
-4N-2  
800  
SYMBOL  
UNITS  
V
Peak Repetitive Off-State Voltage  
V
DRM  
RMS On-State Current (T =80°C)  
C
I
4.0  
40  
A
A
T(RMS)  
Peak Non-Repetitive Surge Current (t=8.3ms)  
Peak Non-Repetitive Surge Current (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10μs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10μs)  
Storage Temperature  
I
TSM  
I
35  
A
A2s  
TSM  
I2t  
6.0  
3.0  
0.2  
1.2  
P
W
GM  
P
W
G(AV)  
I
A
GM  
T
-40 to +150  
-40 to +125  
60  
°C  
stg  
Junction Temperature  
T
°C  
J
Thermal Resistance  
Θ
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
7.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
I
Rated V  
, R =1.0KΩ  
10  
200  
20  
ꢀA  
DRM  
DRM  
GT  
DRM GK  
Rated V , R =1.0KΩ, T =125°C  
DRM GK  
ꢀA  
mA  
mA  
mA  
V
C
V =12V, QUAD I, II, III  
6.6  
35  
D
V =12V, QUAD IV  
50  
GT  
D
R
=1.0KΩ  
5.2  
1.1  
2.0  
1.25  
25  
GK  
V =12V, QUAD I, II, III  
H
V
V
V
1.5  
2.5  
1.6  
D
GT  
GT  
TM  
V =12V, QUAD IV  
V
D
I
=6.0A, tp=380μs  
V
TM  
V =V  
dv/dt  
, T =125°C  
5.0  
V/ꢀs  
D
DRM  
C
R2 (23-April 2012)  

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