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CQ202-4B PDF预览

CQ202-4B

更新时间: 2024-11-18 03:26:35
品牌 Logo 应用领域
CENTRAL 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
2页 36K
描述
4.0 AMP TRIAC 200 THRU 800 VOLTS

CQ202-4B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ObsoleteReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.9Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:25 mA最大直流栅极触发电压:2 V
最大维持电流:25 mAJEDEC-95代码:TO-202
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:4 A
断态重复峰值电压:200 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

CQ202-4B 数据手册

 浏览型号CQ202-4B的Datasheet PDF文件第2页 
TM  
CQ202-4B  
CQ202-4D  
CQ202-4M  
CQ202-4N  
Central  
Semiconductor Corp.  
4.0 AMP TRIAC  
200 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQ202-4B  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
TO-202 THYRISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ202  
-4B  
CQ202  
-4D  
CQ202  
-4M  
CQ202  
-4N UNITS  
Peak Repetitive Off-State Voltage  
V
I
200  
400  
600  
800  
V
A
DRM  
RMS On-State Current (T =80°C)  
C
4.0  
40  
T(RMS)  
TSM  
Peak Non-Repetitive Surge Current (t=8.3ms)  
Peak Non-Repetitive Surge Current (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Storage Temperature  
I
I
A
35  
A
TSM  
I2t  
6.0  
3.0  
0.2  
1.2  
A2s  
W
P
GM  
P
I
W
G(AV)  
A
GM  
T
-40 to +150  
-40 to +125  
60  
°C  
°C  
°C/W  
°C/W  
stg  
Junction Temperature  
T
J
Thermal Resistance  
Θ
Θ
JA  
JC  
Thermal Resistance  
7.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
UNITS  
µA  
I
Rated V  
Rated V  
R
=1KΩ  
DRM  
DRM, GK  
I
, R =1KΩ, T =125°C  
DRM GK  
200  
20  
µA  
DRM  
C
I
V =12V, QUAD I, II, III  
D
V =12V, QUAD IV  
D
6.6  
35  
mA  
mA  
mA  
V
GT  
I
50  
GT  
I
R
=1KΩ  
5.2  
1.1  
2.0  
1.25  
25  
H
GK  
V
V =12V, QUAD I, II, III  
D
V =12V, QUAD IV  
D
1.5  
2.5  
1.60  
GT  
V
V
GT  
V
I
=6.0A, tp=380µs  
2
V
TM  
TM  
dv/dt  
V = / V  
T =125°C  
5.0  
V/µs  
3
D
DRM, C  
R5 (27-June 2005)  

CQ202-4B 替代型号

型号 品牌 替代类型 描述 数据表
L2004F31 LITTELFUSE

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Q2004LT LITTELFUSE

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Quadrac - Internally Triggered Triacs (4 A to 15 A)
L2004F81 LITTELFUSE

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Sensitive Triacs (0.8 A to 8 A)

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