Datasheet > CPZ58X-1N757A

CPZ58X-1N757A

更新时间： 2023-12-06 20:02:09

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	497K
描述
9.1V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener

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CPZ58X-1N757A 数据手册

CPZ58X-1N746A THRU

CPZ58X-1N759A

Zener Diode Die

500mW, 3.3 THRU 12 VOLT

www.centralsemi.com

The CPZ58X-1N746A thru CPZ58X-1N759A are silicon Zener diodes ideal for all types of commercial,

industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

13 x 13 MILS

5.5 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.9 x 5.9 MILS

TiSiCu – 35,000Å

AuAs – 12,000Å

1.69 MILS

6 INCHES

Gross Die Per Wafer

142,858

MAXIMUM RATINGS:

Operating and Storage Junction Temperature

SYMBOL

UNITS

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C) V =1.5V MAX @ I =200mA (for all types)

Zener

Voltage

Maximum

Zener

Impedance

Maximum

Reverse Leakage

Current

Maximum

Regulator

Current

Test

Current

@ I

Type

MIN

NOM

MAX

@ I

µA

110

100

CPZ58X-1N746A

CPZ58X-1N747A

CPZ58X-1N748A

CPZ58X-1N749A

CPZ58X-1N750A

CPZ58X-1N751A

CPZ58X-1N752A

CPZ58X-1N753A

CPZ58X-1N754A

CPZ58X-1N755A

CPZ58X-1N756A

CPZ58X-1N757A

CPZ58X-1N758A

CPZ58X-1N759A

3.135

3.420

3.705

4.085

4.465

4.845

5.320

5.890

6.460

7.125

7.790

8.645

9.50

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

3.465

3.780

4.095

4.515

4.935

5.355

5.880

6.510

7.140

7.875

8.610

9.555

10.50

12.60

1.0

2.0

1.0

0.1

7.0

5.0

6.0

8.0

11.40

R0 (15-August 2023)

12 3 4

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