Datasheet > CPZ58X-1N4625

CPZ58X-1N4625

更新时间： 2023-12-06 20:01:25

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CENTRAL		/
页数	文件大小	规格书
4页	496K
描述
5.1V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener

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CPZ58X-1N4625 数据手册

CPZ58X-1N4614 THRU

CPZ58X-1N4627

Zener Diode Die

250mW, 1.8 THRU 6.2 VOLT

www.centralsemi.com

The CPZ58X-1N4614 thru CPZ58X-1N4627 are silicon Zener diodes ideal for all types of commercial,

industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

13 x 13 MILS

5.5 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.9 x 5.9 MILS

AlSiCu – 35,000Å

AuAs – 12,000Å

1.69 MILS

6 INCHES

Gross Die Per Wafer

142,858

BACKSIDE CATHODE

MAXIMUM RATINGS:

Operating and Storage Junction Temperature

SYMBOL

UNITS

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C) V =1.0V MAX @ I =200mA (for all types)

Zener

Voltage

Maximum

Zener

Impedance

Maximum

Reverse

Current

Maximum

Zener

Current

Maximum

Noise

Density

Test

Current

@ I

Type

MIN

NOM

MAX

@ I

N @ 250μA

µA

7.5

5.0

4.0

2.0

1.0

0.8

7.5

5.0

4.0

120

110

100

µV/ Hz

1.0

2.0

4.0

5.0

CPZ58X-1N4614

CPZ58X-1N4615

CPZ58X-1N4616

CPZ58X-1N4617

CPZ58X-1N4618

CPZ58X-1N4619

CPZ58X-1N4620

CPZ58X-1N4621

CPZ58X-1N4622

CPZ58X-1N4623

CPZ58X-1N4624

CPZ58X-1N4625

CPZ58X-1N4626

CPZ58X-1N4627

1.710

1.900

2.090

2.280

2.565

2.850

3.135

3.420

3.705

4.085

4.465

4.845

5.320

5.890

1.8

2.0

2.2

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

1.890

2.100

2.310

2.520

2.835

3.150

3.465

3.780

4.095

4.515

4.935

5.355

5.880

6.510

250

1200

1250

1300

1400

1500

1600

1650

1700

1650

1600

1550

1500

1400

1200

1.0

1.5

2.0

3.0

4.0

5.0

R0 (15-August 2023)

12 3 4

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