Datasheet > CPD93V-CMPD4150-WN

CPD93V-CMPD4150-WN

更新时间： 2023-04-15 00:00:00

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CPD93V-CMPD4150-WN 数据手册

PROCESS CPD93V

Switching Diode

High Current Switching Diode Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

12.8 x 12.8 MILS

7.1 MILS

Die Thickness

Anode Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.1 x 5.1 MILS

Al - 30,000Å

Au-As - 10,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

63,904

PRINCIPAL DEVICE TYPES

CMPD4150

BAS56

R2 (22-March 2010)

www.centralsemi.com

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