Datasheet > CPD93V-1N4150

CPD93V-1N4150

更新时间： 2024-10-03 14:55:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
6页	537K
描述
200mA,50V Bare die,12.795 X 12.795 mils,Diode-Switching

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CPD93V-1N4150 数据手册

CPD93V-1N4150

High Speed Switching Diode Die

0.2 Amp, 50 Volt

www.centralsemi.com

The CPD93V-1N4150 is a 0.2 Amp, 50 Volt silicon high speed switching diode ideal for all types

of commercial, industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

12.8 x 12.8 MILS

7.1 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.1 x 5.1 MILS

Al – 30,000Å

Au-As – 10,000Å

2.36 MILS

ANODE

4 INCHES

Gross Die Per Wafer

63,904

BACKSIDE CATHODE

MAXIMUM RATINGS: (T =25°C)

Peak Working Reverse Voltage

SYMBOL

UNITS

200

RWM

Average Forward Current

Continuous Forward Current

400

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Operating and Storage Junction Temperature

600

FRM

FSM

4.0

1.0

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =50V

MIN

MAX

100

UNITS

I =5.0ꢀA

I =1.0mA

0.54

0.66

0.76

0.82

0.87

0.62

0.74

0.86

0.92

1.0

I =10mA

I =50mA

I =100mA

I =200mA

V =0, f=1.0MHz

2.5

V =1.0V, I =200mA, t =0.4ns

I =I =10mA to 200mA, R =100Ω

4.0

I =I =200mA to 400mA, R =100Ω

6.0

R0 (19-September 2016)

12 3 4 5 6

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