Datasheet > CPD80V-CMPD2003

CPD80V-CMPD2003

更新时间： 2024-09-23 20:04:59

品牌	Logo	应用领域
CENTRAL		二极管
页数	文件大小	规格书
5页	629K
描述
Rectifier Diode,

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技术参数
数据手册

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CPD80V-CMPD2003 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.74
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

CPD80V-CMPD2003 数据手册

CPD80V-CMPD2003

Switching Diode Die

0.2 Amp, 250 Volt

www.centralsemi.com

The CPD80V-CMPD2003 is a 0.2 Amp, 250 Volt silicon switching diode ideal for all types of

commercial, industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

72.4 x 72.4 MILS

5.9 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

64 x 64 MILS

Al – 30,000Å

Au – 9,000Å

2.36 MILS

ANODE

5 INCHES

3,137

Gross Die Per Wafer

BACKSIDE CATHODE

MAXIMUM RATINGS: (T =25°C)

Continuous Reverse Voltage

SYMBOL

UNITS

200

250

Peak Repetitive Reverse Voltage

Average Forward Current

RRM

200

Continuous Forward Current

250

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Operating and Storage Junction Temperature

625

FRM

4.0

FSM

1.0

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =200V

MIN

MAX

100

UNITS

I =100μA

250

I =100mA

1.0

1.25

5.0

I =200mA

V =0, f=1.0MHz

I =I =30mA, I =3.0mA, R =100Ω

R0 (15-September 2016)

12 3 4 5

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