Datasheet > CPD80V-1N3070

CPD80V-1N3070

更新时间： 2024-09-23 15:46:19

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描述
Rectifier Diode,

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技术参数
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CPD80V-1N3070 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

CPD80V-1N3070 数据手册

CPD80V-1N3070

Switching Diode Die

0.2 Amp, 175 Volt

www.centralsemi.com

The CPD80V-1N3070 is a 0.2 Amp, 175 Volt silicon switching diode ideal for all types of

commercial, industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

16.1 x 16.1 MILS

7.1 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

8.3 x 8.3 MILS

Al – 30,000Å

Au-As – 9,000Å

1.97 MILS

ANODE

5 INCHES

Gross Die Per Wafer

65,400

BACKSIDE CATHODE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitives Reverse Voltage

Peak Working Reverse Voltage

Average Forward Current

175

RRM

RWM

200

Continuous Forward Current

500

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Operating and Storage Junction Temperature

600

FRM

FSM

4.0

1.0

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =175V

MIN

MAX

100

UNITS

I =100μA

200

I =100mA

1.0

5.0

V =0, f=1.0MHz

I =I =30mA, I =1.0mA, R =100Ω

R1 (30-November 2016)

12 3 4 5

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