Datasheet > CPD69-1N5618

CPD69-1N5618

更新时间： 2023-12-06 20:08:20

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	504K
描述
1A,600V Bare die,42.500 X 42.500 mils,Rectifier-General Purpose

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CPD69-1N5618 数据手册

CPD69-1N5618

General Purpose Rectifier Die

1.0 Amp, 600 Volt

www.centralsemi.com

The CPD69-1N5618 is a silicon 1.0 Amp, 600 Volt general purpose rectiﬁer ideal for all types of

commercial, industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

42.5 x 42.5 MILS

11.0 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

24 x 24 MILS

Ni/Au – 5,000Å/1,350Å

2.76 MILS

4 INCHES

Gross Die Per Wafer

5,915

MAXIMUM RATINGS: (T =25°C)

Peak Repetitive Reverse Voltage

SYMBOL

UNITS

600

RRM

DC Blocking Voltage

RMS Reverse Voltage

420

R(RMS)

Average Forward Current (T =55°C)

1.0

Peak Forward Surge Current, tp=8.3ms

FSM

T , T

Operating and Storage Junction Temperature

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise)

SYMBOL

TEST CONDITIONS

V =600V

MIN

MAX

0.5

UNITS

μA

I =50ꢀA

660

I =1.0A

1.2

V =12V, f=130kHz

ꢀs

I =0.5A, I =1.0A, I =0.25A

2.0

R0 (9-September 2021)

12 3 4

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