Datasheet > CPD06-1N5408-CG

CPD06-1N5408-CG

更新时间： 2025-07-16 10:02:07

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CPD06-1N5408-CG 数据手册

PROCESS CPD06

Central

General Purpose Rectifier

3 Amp Glass Passivated Rectifier Chip

Semiconductor Corp.

PROCESS DETAILS

Process

GLASS PASSIVATED MESA

Die Size

Die Thickness

87 x 87 MILS

10.4 MILS

Anode Bonding Pad Area

Top Side Metalization

Back Side Metalization

69.5 x 69.5 MILS

Au - 5,000Å

Au - 2,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

1,490

PRINCIPAL DEVICE TYPES

1N5400 thru 1N5408

1N5550 thru 1N5554

1N5624 thru 1N5627

CMR3-02 Series

BACKSIDE CATHODE

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

R2 (16- September 2003)

www.centralsemi.com

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型号	品牌	获取价格	描述	数据表
CPD06-1N5408-CMPBFREE	CENTRAL	获取价格	Rectifier Diode,
CPD06-1N5408-CMTIN/LEAD	CENTRAL	获取价格	Rectifier Diode,
CPD06-1N5408-CT	CENTRAL	获取价格	Rectifier Diode,
CPD06-1N5408-CTTIN/LEAD	CENTRAL	获取价格	Rectifier Diode,
CPD06-1N5408-WNPBFREE	CENTRAL	获取价格	Rectifier Diode,
CPD06-1N5408-WNTIN/LEAD	CENTRAL	获取价格	Rectifier Diode,
CPD06-1N5408-WR	CENTRAL	获取价格	Rectifier Diode,
CPD06-1N5408-WRTIN/LEAD	CENTRAL	获取价格	Rectifier Diode,
CPD06-1N5550	CENTRAL	获取价格	3A,200V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose
CPD06-1N5554	CENTRAL	获取价格	3A,1000V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose