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CPC5603C PDF预览

CPC5603C

更新时间: 2024-11-05 03:26:27
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页数 文件大小 规格书
3页 237K
描述
N Channel Depletion Mode FET

CPC5603C 数据手册

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CPC5603C  
N Channel Depletion Mode FET  
Description  
Features  
Low on resistance 8 ohms  
Breakdown voltage 415V minimum  
High input impedance  
Low input and output leakage  
Small package size SOT-223  
PC Card (PCMCIA) Compatible  
PCB Space and Cost Savings  
The CPC5603C is an “N” channel depletion mode  
Field Effect Transistor (FET) that utilizes Clare’s  
proprietary third generation vertical DMOS process.  
The third generation process realizes world  
class, high voltage MOSFET performance in an  
economical silicon gate process. The vertical DMOS  
process yields a highly reliable device particularly  
in difficult application environments such as  
telecommunications.  
One of the primary applications for the CPC5603C is  
as a linear regulator/ hook switch for the LITELINK™  
family of Data Access Arrangements (DAA) Devices  
CPC5620A, CPC5621A, and CPC5622A.  
Applications  
Support Component for LITELINK™  
Data Access Arrangement (DAA)  
Telecom  
The CPC5603C has a typical on-resistance of 8Ω, a  
breakdown voltage exceeding 415V and is available  
in an SOT-223 package. As with all MOS devices,  
the FET structure prevents thermal runaway and  
thermal-induced secondary breakdown.  
Ordering Information  
Part #  
Description  
CPC5603C  
N-Channel Depletion Mode FET, SOT-223  
Package (80/tube)  
CPC5603CTR  
N-Channel Depletion Mode FET, SOT-223  
Package Tape and Reel (1000/reel)  
Package Pinout  
D
4
1
2
3
G
D
S
Pin #  
Name  
GATE  
DRAIN  
SOURCE  
DRAIN  
1
2
3
4
DS-CPC5603C-R01.0  
1
www.clare.com  

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