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CPC5603 PDF预览

CPC5603

更新时间: 2024-09-16 06:48:27
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CLARE /
页数 文件大小 规格书
3页 80K
描述
N Channel Depletion Mode FET

CPC5603 数据手册

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CPC5603  
N Channel Depletion Mode FET  
Parameter  
Drain-to-Source Voltage (VDS  
Rating  
415  
Units  
V
Description  
)
The CPC5603 is an “N” channel depletion mode Field  
Effect Transistor (FET) that utilizes Clare’s proprietary  
third generation vertical DMOS process. The third  
generation process realizes world class, high voltage  
MOSFET performance in an economical silicon gate  
process. The vertical DMOS process yields a highly  
reliable device particularly in difficult application  
environments such as telecommunications.  
Ω
W
Max On-Resistance (Ron-max  
)
14  
Max Power  
2.5  
Features  
415V Drain-to-Source Voltage  
Low On-Resistance: 8 Ohms (Typical)  
High Input Impedance  
Low Input and Output Leakage  
Small Package Size SOT-223  
PC Card (PCMCIA) Compatible  
PCB Space and Cost Savings  
One of the primary applications for the CPC5603 is  
as a linear regulator/ hook switch for the LITELINK™  
family of Data Access Arrangements (DAA) Devices  
CPC5620A, CPC5621A, and CPC5622A.  
The CPC5603 has a typical on-resistance of 8Ω, a  
drain-to-source voltage of 415V and is available in  
an SOT-223 package. As with all MOS devices, the  
FET structure prevents thermal runaway and thermal-  
induced secondary breakdown.  
Applications  
Support Component for LITELINK™  
Data Access Arrangement (DAA)  
Telecom  
Ordering Information  
Part #  
CPC5603C  
Description  
N-Channel Depletion Mode FET, SOT-223  
Package (80/tube)  
CPC5603CTR  
N-Channel Depletion Mode FET, SOT-223  
Package Tape and Reel (1000/reel)  
Package Pinout  
D
4
1
2
3
G
D
S
Pin Number  
Name  
1
2
3
4
GATE  
DRAIN  
SOURCE  
DRAIN  
RoHS  
2002/95/EC  
Pb  
e3  
DS-CPC5603-R03  
1
www.clare.com  

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