Datasheet > CPC5602C

CPC5602C

更新时间： 2024-09-15 22:40:15

品牌	Logo	应用领域
CLARE		/
页数	文件大小	规格书
4页	79K
描述
N Channel Depletion Mode FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CPC5602C 数据手册

CPC5602C

N Channel Depletion Mode FET

Description

Features

The CPC5602C is an “N” channel depletion mode Field

Effect Transistor (FET) that utilizes Clare’s proprietary

third generation vertical DMOS process. The third

generation process realizes world class, high voltage

MOSFET performance in an economical silicon gate

process. The vertical DMOS process yields a highly

reliable device particularly in difficult application

environments such as telecommunications.

• Low on resistance 10 ohms

• High input impedance

• Low input and output leakage

• Small package size SOT-223

• PC Card (PCMCIA) Compatible

• PCB Space and Cost Savings

Applications

• Support Component for LITELINK ^TM

Data Access Arrangement (DAA)

• Normally-on switch

One of the primary applications for the CPC5602C is as

a linear regulator/ hook switch for the LITELINK^TMData

Access Arrangements (DAA) Devices (CPC5610A,

CPC5611A, CPC5604A).

• Telecom

• Constant Current Source

The CPC5602C has a typical on-resistance of 8Ω, a

breakdown voltage exceeding 350V and is available in

an SOT-223 package. As with all MOS devices, the FET

structure prevents thermal runaway and thermal-induced

secondary breakdown.

Ordering Information

Absolute Maximum Ratings

Part #

CPC5602C

Description

N-Channel Depletion Mode FET,

SOT-223 Package

Parameter

_DSSVoltage

Min

—

Max

350

Units

Total Package Dissipation

Operational Temperature

Storage Temperature

—

2.5

^OC

CPC5602CTR N-Channel Depletion Mode, SOT-

223 Package

-40

—

+85

+125

+220

FET-TAPE and Reel (1000 units min)

Soldering Temperature

Absolute Maximum Ratings are stress ratings. Stresses in

excess of these ratings can cause permanent damage to

the device. Functional operation of the device at these or

any other conditions beyond those indicated in the opera-

tional sections of this data sheet is not implied. Exposure

of the device to the absolute maximum ratings for an ex-

tended period may degrade the device and effect its reli-

ability.

DS-CPC5602C-Rev. 1

www.clare.com

12 3 4

中文翻译

下载PDF

与CPC5602C相关器件

型号	品牌	获取价格	描述	数据表
CPC5602CTR	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经
CPC5603_12	CLARE	获取价格	N-Channel Depletion Mode FET
CPC5603C	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603CTR	CLARE	获取价格	N Channel Depletion Mode FET
CPC5604	CLARE	获取价格	Optical Data Access Arrangement I.C.
CPC5604A	CLARE	获取价格	Optical Data Access Arrangement I.C.
CPC5604ATR	CLARE	获取价格	Optical Data Access Arrangement I.C.
CPC5608	IXYS	获取价格	Extremely Low Static Current Draw