Datasheet > CPC5602

CPC5602

更新时间： 2024-11-21 14:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		栅高压晶体管场效应晶体管栅极
页数	文件大小	规格书
6页	149K
描述
我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经济的硅栅极工艺中实现了世界级的高压MOSFET性能。垂直DMOS工艺为具有高输入阻抗的高功率应用提供了一

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CPC5602 数据手册

CPC5602

N-Channel Depletion Mode FET

INTEGRATED

CIRCUITS

DIVISION

Parameter

Rating

350

Units

Description

Drain-to-Source Voltage - V_DS

Max On-Resistance - R_DS(on)

Max Power

The CPC5602 is an N-channel depletion mode Field

Effect Transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third generation vertical

DMOS process. The third generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. The vertical

DMOS process yields a highly reliable device,



2.5

Features

• 350V Drain-to-Source Voltage

• Depletion Mode Device Offers Low R_DS(on)

at Cold Temperatures

particularly in difficult application environments such

as telecommunications, security, and power supplies.

• Low On-resistance: 8 (Typical) @ 25°C

• Low V_GS(off)Voltage: -2.0V to -3.6V

• High Input Impedance

• Low Input and Output Leakage

• Small Package Size SOT-223

• PC Card (PCMCIA) Compatible

• PCB Space and Cost Savings

One of the primary applications for the CPC5602 is

as a linear regulator/hook switch for the LITELINK

family of Data Access Arrangements (DAA) Devices

CPC5620A, CPC5621A, and CPC5622A.

The CPC5602 has a typical on-resistance of 8, a

drain-to-source voltage of 350V, and is available in an

SOT-223 package. As with all MOS devices, the FET

structure prevents thermal runaway and

thermal-induced secondary breakdown.

Applications

• Support Component for LITELINK™

Data Access Arrangement (DAA)

• Telecommunications

• Normally On Switches

• Ignition Modules

Ordering Information

Part #

CPC5602CTR

Description

N-Channel Depletion Mode FET, SOT-223 Pkg.

Tape and Reel (1000/Reel)

• Converters

• Security

• Power Supplies

Package Pinout

Pin Number

Name

GATE

DRAIN

SOURCE

DRAIN

DS-CPC5602-R10

www.ixysic.com

12 3 4 5 6

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与CPC5602相关器件

型号	品牌	获取价格	描述	数据表
CPC5602_12	CLARE	获取价格	N-Channel Depletion Mode FET
CPC5602C	CLARE	获取价格	N Channel Depletion Mode FET
CPC5602CTR	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经
CPC5603_12	CLARE	获取价格	N-Channel Depletion Mode FET
CPC5603C	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603CTR	CLARE	获取价格	N Channel Depletion Mode FET
CPC5604	CLARE	获取价格	Optical Data Access Arrangement I.C.
CPC5604A	CLARE	获取价格	Optical Data Access Arrangement I.C.