Datasheet > CPC5602

CPC5602

更新时间： 2024-09-16 06:48:27

品牌	Logo	应用领域
CLARE		/
页数	文件大小	规格书
3页	80K
描述
N Channel Depletion Mode FET

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CPC5602 数据手册

CPC5602

N Channel Depletion Mode FET

Parameter

Drain-to-Source Voltage (V_DS

Rating

350

Units

Description

)

The CPC5602 is an “N” channel depletion mode Field

Effect Transistor (FET) that utilizes Clare’s proprietary

third generation vertical DMOS process. The third

generation process realizes world class, high voltage

MOSFET performance in an economical silicon gate

process. The vertical DMOS process yields a highly

reliable device, particularly in difficult application

environments such as telecommunications.

Max On-Resistance (R_on-max

)

Max Power

2.5

Features

• 350V Drain-to-Source Voltage

• Low On-resistance: 8 Ohms (Typical)

• High input impedance

• Low input and output leakage

• Small package size SOT-223

• PC Card (PCMCIA) Compatible

• PCB Space and Cost Savings

One of the primary applications for the CPC5602 is

as a linear regulator/hook switch for the LITELINK

family of Data Access Arrangements (DAA) Devices

CPC5610A, CPC5611A, CPC5620A, CPC5621A,

and CPC5622A.

The CPC5602 has a typical on-resistance of 8Ω, a

drain-to-source voltage of 350V, and is available in

an SOT-223 package. As with all MOS devices, the

FET structure prevents thermal runaway and thermal-

induced secondary breakdown.

Applications

• Support Component for LITELINK™

Data Access Arrangement (DAA)

• Telecommunications

Ordering Information

Part Number

CPC5602C

Description

N-Channel Depletion Mode FET, SOT-223

Package (80/tube)

CPC5602CTR

N-Channel Depletion Mode FET, SOT-223

Package Tape and Reel (1000/reel)

Package Pinout

Pin Number

Name

GATE

DRAIN

SOURCE

DRAIN

RoHS

2002/95/EC

e₃

DS-CPC5602-R05

www.clare.com

12 3

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与CPC5602相关器件

型号	品牌	获取价格	描述	数据表
CPC5602_12	CLARE	获取价格	N-Channel Depletion Mode FET
CPC5602C	CLARE	获取价格	N Channel Depletion Mode FET
CPC5602CTR	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经
CPC5603_12	CLARE	获取价格	N-Channel Depletion Mode FET
CPC5603C	CLARE	获取价格	N Channel Depletion Mode FET
CPC5603CTR	CLARE	获取价格	N Channel Depletion Mode FET
CPC5604	CLARE	获取价格	Optical Data Access Arrangement I.C.
CPC5604A	CLARE	获取价格	Optical Data Access Arrangement I.C.