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CP716V_10 PDF预览

CP716V_10

更新时间: 2024-10-01 09:30:11
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 396K
描述
Small Signal Transistors PNP - High Voltage Transistor Chip

CP716V_10 数据手册

 浏览型号CP716V_10的Datasheet PDF文件第2页 
PROCESS CP716V  
Small Signal Transistors  
PNP - High Voltage Transistor Chip  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
19.7 x 19.7 MILS  
7.1 MILS  
Die Thickness  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
4.0 x 4.0 MILS  
4.7 x 4.7 MILS  
Al - 30,000Å  
Au - 18,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
29,659  
PRINCIPAL DEVICE TYPES  
CMUT5401  
CMPT5401  
CXT5401  
BACKSIDE COLLECTOR  
R2 (22-March 2010)  
www.centralsemi.com  

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