Datasheet > CP716V-CMUT5401-CM

CP716V-CMUT5401-CM

更新时间： 2024-10-01 14:41:31

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CP716V-CMUT5401-CM 技术参数

PROCESS CP716V

Small Signal Transistors

PNP - High Voltage Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

20 x 20 MILS

7.1 MILS

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

4.0 x 4.0 MILS

4.7 x 4.7 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

29,659

PRINCIPAL DEVICE TYPES

CMUT5401

CMPT5401

CXT5401

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R1 (23- August 2006)

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