Datasheet > CP705V-CZT4033

CP705V-CZT4033

更新时间： 2024-10-01 14:53:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	715K
描述
80V,1A,2W Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A)

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CP705V-CZT4033 数据手册

CP705V

PNP - High Current Transistor Die

1.0 Amp, 80 Volt

www.centralsemi.com

The CP705V is a silicon PNP transistor designed for high current, general purpose ampliﬁer

applications.

MECHANICAL SPECIFICATIONS:

Die Size

31 x 31 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.9 x 11.8 MILS

6.5 x 13.8 MILS

Al – 30,000Å

Au – 9,000Å

1.96 MILS

5 INCHES

Gross Die Per Wafer

17,534

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Operating and Storage Junction Temperature

1.0

-65 to +150

°C

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=60V

500

CBO

=5.0V

500

EBO

I =10μA

CBO

CEO

I =10mA

I =10μA

5.0

EBO

I =500mA, I =50mA

0.50

1.10

700

CE(SAT)

BE(SAT)

I =500mA, I =50mA

=5.0V, I =100mA

100

=10V, I =50mA, f=1.0MHz

MHz

=10V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

110

R5 (10-October 2013)

12 3 4

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