Datasheet > CP608-2N3741

CP608-2N3741

更新时间： 2024-10-01 14:54:27

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	598K
描述
80V,4A,25W Bare die,66.000 X 66.000 mils,Transistor-Bipolar Power (>1A)

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CP608-2N3741 数据手册

CP608-2N3741

PNP - High Current Transistor Die

4.0 Amp, 80 Volt

www.centralsemi.com

The CP6ꢀ8-2N3741 is a silicon PNP transistor designed for and high current applications.

MECHANICAL SPECIFICATIONS:

Die Size

66 x 66 MILS

12.5 1.ꢀ MILS

12 x 24 MILS

11 x 14 MILS

Al – 5ꢀ,ꢀꢀꢀÅ

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

Cr/Ni/Ag – 1,ꢀꢀꢀÅ/6,ꢀꢀꢀÅ/1ꢀ,ꢀꢀꢀÅ

3.ꢀ MILS

4 INCHES

Gross Die Per Wafer

2,645

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

8ꢀ

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

8ꢀ

7.ꢀ

Continuous Collector Current

Peak Collector Current

4.ꢀ

1ꢀ

Continuous Base Current

Operating and Storage Junction Temperature

2.ꢀ

T , T

-65 to +15ꢀ

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=8ꢀV

=6ꢀV

=7.ꢀV

1ꢀꢀ

μA

CBO

CEV

CEO

EBO

1ꢀꢀ

1.ꢀ

ꢀ.5

μA

I =1ꢀꢀmA

8ꢀ

CEO

CE(SAT)

BE(ON)

I =1.ꢀA, I =125mA

ꢀ.6

1.ꢀ

=1.ꢀV, I =25ꢀmA

=1.ꢀV, I =1ꢀꢀmA

4ꢀ

3ꢀ

2ꢀ

1ꢀ

4.ꢀ

=1.ꢀV, I =25ꢀmA

2ꢀꢀ

=1.ꢀV, I =5ꢀꢀmA

=1.ꢀV, I =1.ꢀA

=1ꢀV, I =5ꢀmA, f=1.ꢀkHz

=1ꢀV, I =1ꢀꢀmA, f=1.ꢀMHz

MHz

=1ꢀV, I =ꢀ, f=1ꢀꢀkHz

1ꢀꢀ

Rꢀ (2ꢀ-July 2ꢀ16)

12 3 4 5

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