Datasheet > CP595-2N5680

CP595-2N5680

更新时间： 2024-09-30 21:21:27

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CENTRAL		/
页数	文件大小	规格书
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描述
Power Bipolar Transistor,

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技术参数
数据手册

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CP595-2N5680 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.77
Base Number Matches：	1

CP595-2N5680 数据手册

CP595-2N5680

PNP - High Current Transistor Die

1.0 Amp, 120 Volt

www.centralsemi.com

The CP595-2N5680 is a silicon PNP transistor designed for and high current applications.

MECHANICAL SPECIFICATIONS:

Die Size

30 x 30 MILS

7.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

6.0 x 6.0 MILS

7.5 x 7.5 MILS

Al – 30,000Å

Au – 10,000Å

2.4 MILS

4 INCHES

Gross Die Per Wafer

12,550

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

120

4.0

1.0

0.5

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Operating and Storage Junction Temperature

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=120V

1.0

µA

CBO

CEV

CEO

EBO

=120V, V =1.5V

=80V

1.0

µA

=4.0V

1.0

I =10mA

120

CEO

CE(SAT)

BE(ON)

I =250mA, I =25mA

0.6

1.0

2.0

1.0

150

I =500mA, I =50mA

I =1.0A, I =200mA

=2.0V I =250mA

=2.0V, I =250mA

5.0

=2.0V, I =1.0A

=1.5V, I =0.2A, f=1.0kHz

=10V, I =100mA, f=10MHz

MHz

=20V, I =0, f=1.0MHz

R0 (20-July 2016)

12 3 4

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