Datasheet > CP406-CWDM3011N

CP406-CWDM3011N

更新时间： 2024-11-06 14:55:51

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描述
11A,30V Bare die,63.800 X 38.900 mils,MOSFET

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CP406-CWDM3011N 数据手册

CP406-CWDM3011N

N-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP406-CWDM3011N is a silicon N-Channel MOSFET designed for high speed pulsed

ampliﬁer and driver applications.

MECHANICAL SPECIFICATIONS:

Die Size

63.8 x 38.9 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.1 x 7.1 MILS

60.4 x 35.6 MILS

Al-Cu - 40,000Å

Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å

2.36 MILS

8 INCHES

Gross Die Per Wafer

17,312

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

Power Dissipation

9.93

37.44

1.92

Power Dissipation (T =75°C)

1.15

Operating and Storage Junction Temperature

T , T

-55 to +150

°C

°C/W

stg

Thermal Resistance



ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=20V, V =0

100

GSSF GSSR

=30V, V =0

1.0

μA

DSS

=0, I =250μA

DSS

GS(th)

=V , I =250μA

1.0

1.48

3.0

1.5

GS DS

=0, I =1.0A

=10V, I =1.0A

5.66

9.29

mΩ

DS(ON)

=4.5V, I =1.0A

R0 (7-April 2020)

12 3

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