Datasheet > CP405-CZDM0408N

CP405-CZDM0408N

更新时间： 2023-12-06 20:07:54

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	325K
描述
Bare die,45.700 X 31.900 mils,N-Chan Enhancement Mode MOSFET

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CP405-CZDM0408N 数据手册

CP405-CZDM0408N

N-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP405-CZDM0408N is a high current silicon N-Channel MOSFET designed for high speed

pulsed ampliﬁer and driver applications.

MECHANICAL SPECIFICATIONS:

Die Size

45.7 x 31.9 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

8.1 x 8.1 MILS

41.9 x 28.1 MILS

Al-Cu – 40,000Å

Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å

2.36 MILS

8 INCHES

Gross Die Per Wafer

29,400

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Operating and Storage Junction Temperature

Thermal Resistance

8.01

30.42

-55 to +150

T , T

°C

°C/W

stg



ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=20V, V =0

100

GSSF GSSR

=40V, V =0

1.0

μA

DSS

=0, I =250μA

DSS

GS(th)

=V , I =250μA

1.0

3.0

1.5

GS DS

=0, I =1.0A

=10V, I =1.0A

0.015

0.024

0.020

0.040

DS(ON)

=4.5V, I =1.0A

R0 (7-May 2020)

12 3

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