Datasheet > CP388X-2N5089

CP388X-2N5089

更新时间： 2024-11-26 14:54:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	620K
描述
25V,50mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

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CP388X-2N5089 数据手册

CP388X-2N5089

NPN - Low Noise Transistor Die

www.centralsemi.com

The CP388X-2N5089 is a silicon NPN transistor designed for low noise ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

13 x 13 MILS

5.9 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.9 x 3.9 MILS

5.4 x 5.4 MILS

Al-Si – 17,000Å

Au – 9,000Å

1.8 MILS

5 INCHES

Gross Die Per Wafer

102,852

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

4.5

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=15V

=3.0V

=4.5V

CBO

EBO

100

I =100μA

CBO

CEO

CE(SAT)

BE(ON)

I =1.0mA

I =10mA, I =1.0mA

0.50

0.80

1200

=5.0V, I =10mA

=5.0V, I =100μA

400

450

400

450

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =1.0mA, f=1.0kHz

1800

=5.0V, I =500μA, f=20MHz

MHz

=5.0V, I =0, f=100kHz

4.0

=0.5V, I =0, f=100kHz

=5.0V, I =100μA, R =10kΩ,

C S

f=10Hz to 15.7kHz

2.0

R0 (20-June 2016)

12 3 4

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