Datasheet > CP388X-2N2484

CP388X-2N2484

更新时间： 2024-11-08 14:53:43

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	611K
描述
60V,50mA,360mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

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CP388X-2N2484 数据手册

CP388X-2N2484

NPN - Low Noise Transistor Die

www.centralsemi.com

The CP388X-2N2484 is a silicon NPN transistor designed for low noise ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

13 x 13 MILS

5.9 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.9 x 3.9 MILS

5.4 x 5.4 MILS

Al-Si – 17,000Å

Au – 9,000Å

1.8 MILS

5 INCHES

Gross Die Per Wafer

102,852

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

6.0

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

°C

T , T

stg

-65 to +150

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=45V

=5.0V

CBO

CEO

EBO

2.0

I =10μA

CBO

CEO

EBO

CE(SAT)

BE(ON)

I =10mA

I =10μA

6.0

I =1.0mA, I =100μA

0.35

0.7

=5.0V, I =100μA

0.5

=5.0V, I =1.0ꢀA

=5.0V, I =10ꢀA

100

175

200

250

500

=5.0V, I =100ꢀA

=5.0V, I =500ꢀA

=5.0V, I =1.0mA

=5.0V, I =10mA

800

900

=5.0V, I =1.0mA, f=1.0kHz

150

=5.0V, I =50μA, f=5.0MHz

MHz

kΩ

=5.0V, I =0.5mA, f=30MHz

=5.0V, I =1.0mA, f=1.0kHz

3.5

=5.0V, I =1.0mA, f=1.0kHz

μS

x10^-6

=5.0V, I =1.0mA, f=1.0kHz

800

R0 (20-June 2016)

12 3 4 5

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