Datasheet > CP387X-CWDM305N

CP387X-CWDM305N

更新时间： 2024-09-26 14:54:47

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	742K
描述
5.8A,30V Bare die,37.800 X 26.000 mils,MOSFET

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CP387X-CWDM305N 数据手册

CP387X-CWDM305N

N-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP387X-CWDM305N is a high current silicon N-Channel MOSFET designed for high speed

pulsed ampliﬁer and driver applications.

MECHANICAL SPECIFICATIONS:

Die Size

37.8 x 26 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.3 x 7.3 MILS

34 x 22.2 MILS

Al – 40,000Å

Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å

2.36 MILS

8 INCHES

Gross Die Per Wafer

45,000

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Operating and Storage Junction Temperature

5.8

23.2

T , T

-55 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=20V, V =0

100

GSSF GSSR

=30V, V =0

1.0

μA

DSS

=0, I =250μA

DSS

GS(th)

=V , I =250μA

1.0

3.0

GS DS

=10V, I =2.9A

0.024

0.028

0.030

0.034

DS(ON)

=5.0V, I =2.9A

DS(ON)

=5.0V, I =5.8A

=10V, V =0, f=1.0MHz

560

rss

iss

=10V, V =0, f=1.0MHz

500

=10V, V =0, f=1.0MHz

oss

=15V, V =5.0V, I =5.8A

4.2

6.3

1.4

2.1

g(tot)

=15V, V =5.0V, I =5.8A

0.9

=15V, V =5.0V, I =5.8A

1.4

=15V, I =5.8A, R =10Ω

6.5

off

=15V, I =5.8A, R =10Ω

8.5

R0 (8-April 2019)

12 3 4

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