Datasheet > CP384X-CXT3090L

CP384X-CXT3090L

更新时间： 2024-09-18 14:54:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	593K
描述
15V,3A,1.2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A)

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CP384X-CXT3090L 数据手册

CP384X-CXT3090L

NPN - Low V_CE(SAT)Transistor Die

3.0 Amp, 15 Volt

www.centralsemi.com

The CP384X-CXT3090L die is a low V

converters.

silicon NPN power transistor designed for DC-DC

CE(SAT)

MECHANICAL SPECIFICATIONS:

Die Size

39.8 x 39.8 MILS

Die Thickness

5.9 MILS

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.8 x 7.8 MILS

Al-Si – 30,000Å

Au-As – 9,000Å

1.96 MILS

5 INCHES

Gross Die Per Wafer

10,823

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Peak Collector Current

3.0

5.0

Operating and Storage Junction Temperature

-65 to +175

°C

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=20V

100

CBO

=5.0V

100

EBO

I =10µA

CBO

CEO

I =10mA

I =10µA

6.0

EBO

I =100mA, I =1.0mA

CE(SAT)

I =1.0A, I =20mA

150

200

300

I =2.0A, I =200mA

I =3.0A, I =60mA

=2.0V, I =500mA

200

150

=2.0V, I =1.0A

=2.0V, I =3.0A

=10V, f=1.0MHz

100

=10V, I =500mA

100

MHz

R0 (27-August 2018)

12 3 4

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