Datasheet > CP383X-CMPT3820

CP383X-CMPT3820

更新时间： 2024-11-08 14:55:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	946K
描述
Bare die,26.000 X 26.000 mils,Low VCE(sat) Transistor

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CP383X-CMPT3820 数据手册

CP383X

NPN - Low V_CE(SAT)Transistor Die

1.0 Amp, 60 Volt

www.centralsemi.com

The CP383X is a silicon NPN transistor designed for battery driven, handheld devices requiring

high current and low V

CE(SAT)

MECHANICAL SPECIFICATIONS:

Die Size

26 x 26 MILS

Die Thickness

5.9 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.5 x 5.5 MILS

Al – 30,000Å

Ti/Ni/Ag – 2,000Å/3,000Å/20,000Å

1.77 MILS

5 INCHES

Gross Die Per Wafer

25,536

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

CBO

CEO

EBO

5.0

Continuous Collector Current

Peak Collector Current

Continuous Base Current

1.0

2.0

300

°C

Operating and Storage Junction Temperature

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=60V

100

CBO

=5.0V

100

EBO

I =100μA

CBO

CEO

I =10mA

I =100μA

5.0

EBO

I =100mA, I =1.0mA

0.115

0.15

0.28

1.1

CE(SAT)

BE(SAT)

BE(ON)

I =500mA, I =50mA

I =1.0A, I =100mA

I =1.0A, I =50mA

=5.0V, I =1.0A

0.9

=5.0V, I =1.0mA

200

100

150

=5.0V, I =500mA

=5.0V, I =1.0A

=10V, I =50mA

MHz

=10V, I =0, f=1.0MHz

R0 (5-November 2014)

12 3 4

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