Datasheet > CP382X

CP382X

更新时间： 2024-01-25 23:41:52

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	728K
描述
Small Signal Transistor NPN - Low VCE(SAT) Transistor Chip

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

CP382X 数据手册

PROCESS CP382X

Small Signal Transistor

NPN - Low V

Transistor Chip

CE(SAT)

PROCESS DETAILS

Die Size

26 x 26 MILS

5.9 MILS

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.5 x 5.5 MILS

Al - 30,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

25,536

PRINCIPAL DEVICE TYPES

CMLT3820G

CMPT3820

CXT3820

R0 (9-September 2010)

www.centralsemi.com

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
CP382X-CMPT3820	CENTRAL	获取价格	60V,1A,350mW Bare die,26.000 X 26.000 mils,Transistor-Small Signal (<=1A)
CP383X-CMPT3820	CENTRAL	获取价格	Bare die,26.000 X 26.000 mils,Low VCE(sat) Transistor
CP384X-CXT3090L	CENTRAL	获取价格	15V,3A,1.2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A)
CP384X-CZT3090LE	CENTRAL	获取价格	50V,3A,2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A)
CP387X-CWDM305N	CENTRAL	获取价格	5.8A,30V Bare die,37.800 X 26.000 mils,MOSFET
CP388X-2N2484	CENTRAL	获取价格	60V,50mA,360mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)
CP388X-2N2919	CENTRAL	获取价格	60V,30mA,300mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)
CP388X-2N2920	CENTRAL	获取价格	60V,30mA,300mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)
CP388X-2N3117	CENTRAL	获取价格	60V,50mA,360mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)
CP388X-2N5088	CENTRAL	获取价格	30V,50mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)