Datasheet > CP373-CTLDM303N

CP373-CTLDM303N

更新时间： 2024-11-22 14:53:59

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	889K
描述
Bare die,39.000 X 27.000 mils,N-Chan Enhancement Mode MOSFET

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CP373-CTLDM303N 数据手册

PROCESS CP373

MOSFET Transistor

N-Channel Enhancement-Mode MOSFET Chip

PROCESS DETAILS

Die Size

39 x 27 MILS

Die Thickness

7.5 MILS

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

6.5 x 6.5 MILS

30 x 20 MILS

Al - 40,000Å

Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å

GEOMETRY

GROSS DIE PER 8 INCH WAFER

43,500

PRINCIPAL DEVICE TYPE

CMPDM303NH

CTLDM303N-M832DS

R1 (10-October 2012)

www.centralsemi.com

12 3 4 5

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