Datasheet > CP349-BUY49S

CP349-BUY49S

更新时间： 2024-11-22 14:53:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	456K
描述
200V,3A,1W Bare die,51.181 X 51.181 mils,Transistor-Bipolar Power (>1A)

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技术参数
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CP349-BUY49S 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.77
Base Number Matches：	1

CP349-BUY49S 数据手册

CP349-BUY49S

NPN - High Current Transistor Die

www.centralsemi.com

The CP349-BUY49S is a silicon NPN transistor designed for high current applications.

MECHANICAL SPECIFICATIONS:

Die Size

51.2 x 51.2 MILS

9.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.9 x 15.7 MILS

Al – 30,000Å

Ti/Ni/Ag – 2,000Å/3,000Å/20,000Å

2.0 MILS

5 INCHES

Gross Die Per Wafer

6,487

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

250

200

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Peak Collector Current

3.0

5.0

T , T

Operating and Storage Junction Temperature

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

=200V

MIN

MAX

0.1

UNITS

μA

CBO

I =100ꢀA

250

200

6.0

CBO

CEO

I =20mA

I =1.0mA

EBO

I =500mA, I =50mA

0.2

1.1

CE(SAT)

BE(SAT)

I =500mA, I =50mA

=5.0V, I =20mA

=5.0V, I =500mA

=10V, I =100mA

MHz

μs

=10V, I =0, f=1.0MHz

0.3

1.0

=20V, I =500mA, I =I =50mA

B1 B2

=20V, I =500mA, I =I =50mA

μs

off

B1 B2

=50V

0.2

S/B

R0 (6-June 2016)

12 3 4

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