Datasheet > CP348-BUY48

CP348-BUY48

更新时间： 2024-11-22 14:51:35

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	524K
描述
170V,7A,1W Bare die,82.677 X 82.677 mils,Transistor-Bipolar Power (>1A)

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CP348-BUY48 数据手册

CP348-BUY48

NPN - High Current Transistor Die

www.centralsemi.com

The CP348-BUY48 is a silicon NPN transistor designed for high current applications.

MECHANICAL SPECIFICATIONS:

Die Size

82 x 82 MILS

9.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

13 x 17 MILS

13 x 25 MILS

Al-Si – 40,000Å

Ti/Ni/Ag – 2,000Å/3,000Å/20,000Å

2.0 MILS

5 INCHES

Gross Die Per Wafer

2,449

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

200

170

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Peak Collector Current

7.0

T , T

Operating and Storage Junction Temperature

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

=100V

MIN

TYP

MAX

UNITS

µA

CBO

I =1.0mA

200

170

6.0

CBO

CEO

I =20mA

I =1.0mA

EBO

I =2.0A, I =200mA

0.45

1.0

1.1

1.5

CE(SAT)

BE(SAT)

I =5.0A, I =500mA

I =2.0A, I =200mA

I =5.0A, I =500mA

=5.0V, I =500mA

=5.0V, I =2.0A

=5.0V, I =5.0A

=10V, I =100mA

MHz

=50V, I =0, f=1.0MHz

1.0

2.0

=40V, I =5.0A, I =I =500mA

µs

off

B1 B2

=40V, I =5.0A, I =I =500mA

µs

B1 B2

R0 (6-June 2016)

12 3 4

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