Datasheet > CP324-2N7002-CG

CP324-2N7002-CG

更新时间： 2024-09-13 20:57:31

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CP324-2N7002-CG 技术参数

PROCESS CP324

Central

Small Signal MOSFET Transistor

N-Channel Enhancement-Mode Transistor Chip

Semiconductor Corp.

PROCESS DETAILS

Process

Die Size

EPITAXIAL PLANAR

21.65 x 21.65 MILS

Die Thickness

9.0 MILS

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.5 x 5.5 MILS

5.9 x 13.8 MILS

Al - 30,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

35,900

PRINCIPAL DEVICE TYPES

2N7002

BACKSIDE DRAIN

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R1 (1-August 2002)

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