Datasheet > CP310-MPSA44-CG

CP310-MPSA44-CG

更新时间： 2024-10-29 09:11:35

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	216K
描述
Transistor

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中文翻译

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数据手册

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CP310-MPSA44-CG 数据手册

PROCESS CP310

Small Signal Transistor

NPN - High Voltage Transistor Chip

Central

Semiconductor Corp.

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

Die Thickness

26 x 26 MILS

9.0 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

6.1 x 4.9 MILS

5.2 x 5.2 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

16,880

PRINCIPAL DEVICE TYPES

2N3439

2N3440

CMPTA42

CMPTA44

CMPT6517

CXTA44

CZTA42

CZTA44

MPSA42

MPSA44

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R2 (1-August 2002)

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