Datasheet > CP310-CMPTA44

CP310-CMPTA44

更新时间： 2024-10-28 19:04:19

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CENTRAL		/
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4页	614K
描述
Small Signal Bipolar Transistor,

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技术参数
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CP310-CMPTA44 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.7
Base Number Matches：	1

CP310-CMPTA44 数据手册

CP310-CMPTA44

NPN - High Voltage Transistor Die

www.centralsemi.com

The CP310-CMPTA44 is a silicon NPN transistor designed for extremely high voltage applications.

MECHANICAL SPECIFICATIONS:

Die Size

26 x 26 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

6.1 x 4.9 MILS

5.2 x 5.2 MILS

Al – 30,000Å

Au – 9,000Å

2.2 MILS

5 INCHES

Gross Die Per Wafer

25,214

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

450

400

6.0

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

300

°C

-65 to +150

J_,stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=400V

=4.0V

100

CBO

CES

EBO

500

100

I =100µA

450

400

6.0

CBO

CES

I =100µA

I =1.0mA

CEO

I =10µA

EBO

I =1.0mA, I =0.1mA

0.40

0.50

0.75

CE(SAT)

BE(SAT)

I =10mA, I =1.0mA

I =50mA, I =5.0mA

I =10mA, I =1.0mA

=10V, I =1.0mA

=10V, I =10mA

200

=10V, I =50mA

=10V, I =100mA

=10V, I =10mA, f=10MHz

MHz

=20V, I =0, f=1.0MHz

7.0

=0.5V, I =0, f=1.0MHz

130

R0 (9-May 2016)

12 3 4

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