Datasheet > CP310-2N6517

CP310-2N6517

更新时间： 2024-10-28 20:05:07

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CENTRAL		/
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5页	692K
描述
Small Signal Bipolar Transistor,

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技术参数
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CP310-2N6517 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.7
Base Number Matches：	1

CP310-2N6517 数据手册

CP310-2N6517

NPN - High Voltage Transistor Die

www.centralsemi.com

The CP310-2N6517 is a silicon NPN transistor designed for high voltage driver and ampliﬁer

applications.

MECHANICAL SPECIFICATIONS:

Die Size

26 x 26 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

6.1 x 4.9 MILS

5.2 x 5.2 MILS

Al – 30,000Å

Au – 9,000Å

2.2 MILS

5 INCHES

Gross Die Per Wafer

25,214

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

350

6.0

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

500

250

°C

Operating and Storage Junction Temperature

T , T

stg

-65 to +150

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=250V

CBO

EBO

=5.0V

I =100μA

350

6.0

CBO

CEO

I =1.0mA

I =10μA

EBO

I =10mA, I =1.0mA

0.30

0.35

0.50

1.0

CE(SAT)

BE(SAT)

BE(ON)

I =20mA, I =2.0mA

I =30mA, I =3.0mA

I =50mA, I =5.0mA

I =10mA, I =1.0mA

0.75

0.85

0.90

2.0

I =20mA, I =2.0mA

I =30mA, I =3.0mA

=10V, I =100mA

=10V, I =1.0mA

=10V, I =10mA

=10V, I =30mA

200

=10V, I =50mA

=10V, I =100mA

=20V, I =10mA, f=20MHz

200

MHz

R0 (9-May 2016)

12 3 4 5

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