Datasheet > CP310-2N6431

CP310-2N6431

更新时间： 2024-10-29 14:54:11

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CENTRAL		/
页数	文件大小	规格书
4页	538K
描述
300V,500mA,500mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

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CP310-2N6431 数据手册

CP310-2N6431

NPN - High Voltage Transistor Die

www.centralsemi.com

The CP310-2N6431 is a silicon NPN transistor designed for high voltage ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

26 x 26 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

6.1 x 4.9 MILS

5.2 x 5.2 MILS

Al – 30,000Å

Au – 9,000Å

2.2 MILS

5 INCHES

Gross Die Per Wafer

25,214

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

300

6.0

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

100

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=200V

100

CBO

=4.0V

100

EBO

I =100μA

300

6.0

CBO

CEO

EBO

I =1.0mA

I =100μA

I =20mA, I =2.0mA

0.5

0.9

CE(SAT)

BE(SAT)

I =20mA, I =2.0mA

=10V, I =1.0mA

=10V, I =10mA

=10V, I =30mA

200

4.0

=20V, I =10mA, f=100MHz

MHz

=20V, I =0, f=1.0MHz

R0 (9-May 2016)

12 3 4

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