Datasheet > CP310-2N3440

CP310-2N3440

更新时间： 2024-10-29 14:54:55

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	538K
描述
250V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

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CP310-2N3440 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
Base Number Matches：	1

CP310-2N3440 数据手册

CP310-2N3440

NPN - High Voltage Transistor Die

www.centralsemi.com

The CP310-2N3440 is a silicon NPN transistor designed for consumer and line-operated high

voltage applications.

MECHANICAL SPECIFICATIONS:

Die Size

26 x 26 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

6.1 x 4.9 MILS

5.2 x 5.2 MILS

Al – 30,000Å

Au – 9,000Å

2.2 MILS

5 INCHES

Gross Die Per Wafer

25,214

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

300

250

7.0

1.0

0.5

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Operating and Storage Junction Temperature

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=250V

=200V

=6.0V

μA

CBO

CEO

EBO

μA

I =50mA

250

CEO

CE(SAT)

BE(SAT)

I =50mA, I =4.0mA

0.5

1.3

I =50mA, I =4.0mA

=10V, I =20mA

160

=10V, I =10mA, f=5.0MHz

MHz

=10V, I =0, f=1.0MHz

=5.0V, I =0, f=1.0MHz

R0 (9-May 2016)

12 3 4

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