Datasheet > CP307-CZTA27

CP307-CZTA27

更新时间： 2024-10-29 14:55:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	636K
描述
500mA,60V Bare die,27.170 X 27.170 mils,Transistor-Small Signal (<=1A)

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CP307-CZTA27 技术参数

生命周期：	End Of Life	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Base Number Matches：	1

CP307-CZTA27 数据手册

CP307-CZTA27

NPN - Darlington Transistor Die

0.5 Amp, 60 Volt

www.centralsemi.com

The CP307-CZTA27 die is a silicon NPN Darlington power transistor designed for high gain

ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

27.2 x 27.2 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.3 x 3.8 MILS

5.3 x 6.5 MILS

Al – 30,000Å

Au – 18,000Å

1.97 mils

4 INCHES

Gross Die Per Wafer

15,165

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Emitter Voltage

SYMBOL

UNITS

CES

Emitter-Base Voltage

EBO

Continuous Collector Current

Operating and Storage Junction Temperature

0.5

-65 to +150

°C

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=50V

=10V

100

CBO

CES

EBO

500

100

I =100μA

CBO

CES

I =100μA

I =100mA, I =0.1mA

1.5

2.0

CE(SAT)

BE(ON)

=5.0V, I =100mA

=5.0V, I =10mA

10,000

125

=5.0V, I =100mA

=5.0V, I =10mA, f=100MHz

MHz

R0 (26-October 2015)

12 3 4 5

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