Datasheet > CP305V-D40D11

CP305V-D40D11

更新时间： 2024-10-29 17:01:59

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	619K
描述
75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A)

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CP305V-D40D11 数据手册

CP305V-D40D11

NPN - High Current Transistor Die

www.centralsemi.com

The CP305V-D40D11 is a silicon NPN small signal transistor designed for general purpose

ampliﬁer and switching applications.

MECHANICAL SPECIFICATIONS:

Die Size

31 x 31 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.9 x 11.8 MILS

6.5 x 13.8 MILS

Al – 13,000Å

Au-As – 9,000Å

1.97 MILS

5 INCHES

Gross Die Per Wafer

17,534

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Emitter Voltage

CES

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Peak Collector Current

1.0

1.5

T , T

Operating and Storage Junction Temperature

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=90V

100

CES

=5.0V

100

EBO

I =10mA

CEO

CE(SAT)

BE(SAT)

I =500mA, I =50mA

1.0

1.5

I =500mA, I =50mA

=2.0V, I =100mA

120

360

=2.0V, I =1.0A

R1 (24-June 2021)

12 3 4

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