Datasheet > CP305V-BCW66H

CP305V-BCW66H

更新时间： 2024-10-29 17:01:11

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	535K
描述
45V,800mA,350mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A)

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CP305V-BCW66H 数据手册

CP305V-BCW66H

NPN - Small Signal Transistor Die

0.8 Amp, 45 Volt

www.centralsemi.com

The CP305V-BCW66H is a silicon NPN small signal transistor designed for general purpose

ampliﬁer and switching applications.

MECHANICAL SPECIFICATIONS:

Die Size

31.1 x 31.1 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.9 x 11.8 MILS

6.5 x 13.8 MILS

Al – 13,000Å

Au/As-Au – 9,000Å

1.96 MILS

5 INCHES

Gross Die Per Wafer

17,534

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Peak Collector Current

800

1.0

Continuous Base Current

Peak Base Current

100

°C

200

T , T

Operating and Storage Junction Temperature

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=75V

CBO

EBO

=4.0V

I =10µA

CBO

CEO

I =10mA

I =10µA

5.0

EBO

I =100mA, I =10mA

0.3

0.7

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =100mA, I =10mA

1.25

2.0

I =500mA, I =50mA

=10V, I =100µA

=1.0V, I =10mA

180

250

100

=1.0V, I =100mA

630

=2.0V, I =500mA

=5.0V, I =50mA, f=20MHz

170

8.0

MHz

=10V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

R2 (9-March 2017)

12 3 4

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