Datasheet > CP305V-2N2897

CP305V-2N2897

更新时间： 2024-10-29 17:01:27

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	621K
描述
45V,1A,500mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A)

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CP305V-2N2897 数据手册

CP305V-2N2897

NPN - Small Signal Transistor Die

45 Volt

www.centralsemi.com

The CP305V-2N2897 is a silicon NPN small signal transistor designed for general purpose

ampliﬁer and switching applications.

MECHANICAL SPECIFICATIONS:

Die Size

31.1 x 31.1 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.9 x 11.8 MILS

6.5 x 13.8 MILS

Al – 13,000Å

Au/As-Au – 9,000Å

1.96 MILS

5 INCHES

Gross Die Per Wafer

17,534

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CER

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

7.0

Continuous Collector Current

Operating and Storage Junction Temperature

1.0

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=60V

CBO

=5.0V

EBO

I =100μA

7.0

CBO

CER

CEO

EBO

CE(SAT)

BE(SAT)

I =100mA, R =10Ω

I =100mA

I =100μA

I =150mA, I =15mA

1.0

1.3

I =150mA, I =15mA

=10V, I =1.0mA

=10V, I =150mA

200

275

=5.0V, I =5.0mA, f=1.0kHz

=10V, I =50mA, f=20MHz

100

MHz

=10V, I =0, f=100kHz

=0.5V, I =0, f=100kHz

R0 (4-January 2019)

12 3 4

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