Datasheet > CP305-MJE182

CP305-MJE182

更新时间： 2024-04-09 18:58:21

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
9页	771K
描述
80V,3A,1.5W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A)

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CP305-MJE182 数据手册

PROCESS CP305

Small Signal Transistor

NPN - High Current Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

31 x 31 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.9 x 11.8 MILS

6.5 x 13.8 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

11,212

PRINCIPAL DEVICE TYPES

2N3019

CMPT3019

CXT3019

CZT3019

R3 (22-March 2010)

www.centralsemi.com

12 3 4 5 6 7...9

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