CP25P10FR PDF预览

CP25P10FR

更新时间: 2025-07-19 01:03:07
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 1016K
描述
30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

CP25P10FR 数据手册

 浏览型号CP25P10FR的Datasheet PDF文件第2页浏览型号CP25P10FR的Datasheet PDF文件第3页 
CP25P10FR thru CP25P60FR  
CP25P10FR thru CP25P60FR  
Pb Free Plating Product  
30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers  
TO-3PN/TO-3PB  
Features  
ThinkiSemi mesa technology with high efficiency  
Bottom Side Metal Heat Sink/Case  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,Motor Control,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
Case: Heatsink TO-3PN open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Case  
Series  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 0.65 gram approximately  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "FS"  
Negative  
Positive  
Suffix "F"  
Suffix "FR"  
Suffix "FD"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
CP25P10FR  
CP25P20FR  
CP25P30FR  
CP25P40FR  
CP25P50FR  
CP25P60FR  
UNIT  
SYMBOL  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
30.0  
A
A
V
IF(AV)  
o
(Total Device 2x15A=30A)  
Current TC=125 C  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
300  
Maximum Instantaneous Forward Voltage  
VF  
IR  
0.98  
1.30  
1.70  
@ 15.0 A  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
5.0  
100  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
35-50  
150  
pF  
oC  
Operating Junction and Storage  
Temperature Range  
T
J, TSTG  
-55 to +150  
.
= 0.5A I = 1 0A Irr = 0.25A.  
F R  
NOTES : (1) Reverse recovery test conditions I  
(2) Thermal Resistance junction to terminal.  
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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